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Other articles related with "gate length"：
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27303 |
Jun Luo(罗俊), Sheng-Lei Zhao(赵胜雷), Min-Han Mi(宓珉瀚), Wei-Wei Chen(陈伟伟), Bin Hou(侯斌), Jin-Cheng Zhang(张进成), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) |
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Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor |
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Chin. Phys. B
2016 Vol.25 (2): 27303-027303
[Abstract]
(951)
[HTML 1 KB]
[PDF 496 KB]
(936)
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117303 |
Cao Yan-Rong (曹艳荣), He Wen-Long (何文龙), Cao Cheng (曹成), Yang Yi (杨毅), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress |
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Chin. Phys. B
2014 Vol.23 (11): 117303-117303
[Abstract]
(580)
[HTML 1 KB]
[PDF 365 KB]
(453)
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